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2SK3746

2SK3746

2SK3746

ON Semiconductor

2SK3746 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

2SK3746 Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTray
Published 2005
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
Terminal Finish Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
Technology MOSFET (Metal Oxide)
Pin Count3
Number of Elements 1
Power Dissipation-Max 2.5W Ta 110W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation2.5W
Turn On Delay Time12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 13 Ω @ 1A, 10V
Input Capacitance (Ciss) (Max) @ Vds 380pF @ 30V
Current - Continuous Drain (Id) @ 25°C 2A Ta
Gate Charge (Qg) (Max) @ Vgs 37.5nC @ 10V
Rise Time37ns
Drain to Source Voltage (Vdss) 1500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 59 ns
Turn-Off Delay Time 152 ns
Continuous Drain Current (ID) 2A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 2A
Drain to Source Breakdown Voltage 1.5kV
Pulsed Drain Current-Max (IDM) 4A
Dual Supply Voltage 1.5kV
Avalanche Energy Rating (Eas) 42 mJ
Nominal Vgs 3.5 V
Radiation HardeningNo
RoHS StatusRoHS Compliant
In-Stock:1811 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$3.74000$3.74
500$3.7026$1851.3
1000$3.6652$3665.2
1500$3.6278$5441.7
2000$3.5904$7180.8
2500$3.553$8882.5

2SK3746 Product Details

Description


The 2SK3746 is an N-Channel Power MOSFET, 1500V, 2A, 13Ω, TO-3P-3L. A special kind of metal-oxide-semiconductor field-effect transistor (MOSFET) made to handle high power levels is known as a power MOSFET. High switching speed and good efficiency at low voltages are its key benefits over other power semiconductor devices like insulated-gate bipolar transistors (IGBT) or thyristors. It has an easy-to-drive gate that it shares with the IGBT. They occasionally have low gain to the point that a larger gate voltage is required than the control voltage.



Features


  • High reliability (Adoption of HVP process)

  • Low ON resistance, low input capacitance, Ultrahigh-speed switching

  • Avalanche resistance guarantee

  • Drain Current: [email protected]=25°C

  • Drain Source Voltage: VDSS=1500V(Min)

  • 100% avalanche tested



Applications


  • Switch Mode Power Supplies (SMPS)

  • Power-Over-Ethernet (PoE)

  • Solar Inverters

  • Automotive Applications

  • Switch, Buck and Synchronous rectification

  • Uninterruptible Power Supplies (UPS)

  • Small Motor Control


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