2SK3666-2-TB-E Description
N – Channel JFET ?It consists of an n – type silicon bar forming the conduction channel for the charge carriers. The pn – junction forming diodes are connected internally and a common terminal called GATE is taken out from the p - Region. The other two terminals viz. Source and Drain are taken out from the bar.
2SK3666-2-TB-E Applications
·Low-frequency general-purpose amplifier
impedance conversion
infrared sensor applications
2SK3666-2-TB-E Features
·Small IGSS
·Small Ciss
