2SK2394-7-TB-E Description
IGBT (insulated gate bipolar transistor) provides a high switching speed necessary for PWM VFD operation. IGBTs are capable of switching on and off several thousand times a second. A VFD IGBT can turn on in less than 400 nanoseconds and off in approximately 500 nanoseconds.
2SK2394-7-TB-E Features
· 75% lower Eoff compared to previous generation
combined with low conduction losses
· Short circuit withstand time – 10 ms
· Designed for:
- Motor controls
- Inverter
· NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
· Very soft, fast recovery anti-parallel Emitter Controlled
Diode
· Pb-free lead plating; RoHS compliant
· Qualified according to JEDEC1 for target applications
2SK2394-7-TB-E Applications
? Industrial Control
? Medical monitoring
? Home automation/ alarm/ energy management
