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2SJ652

  • 2SJ652 - 2SJ652 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
  • 2SJ652 - 2SJ652 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

2SJ652

2SJ652

ON Semiconductor

2SJ652 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

2SJ652 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingBulk
Published 2003
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
HTS Code8541.29.00.95
Technology MOSFET (Metal Oxide)
Pin Count3
Number of Elements 1
Power Dissipation-Max 2W Ta 30W Tc
Element ConfigurationSingle
Operating ModeDEPLETION MODE
Power Dissipation30W
Case Connection ISOLATED
Turn On Delay Time33 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 38m Ω @ 14A, 10V
Input Capacitance (Ciss) (Max) @ Vds 4360pF @ 20V
Current - Continuous Drain (Id) @ 25°C 28A Ta
Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V
Rise Time210ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Vgs (Max) ±20V
Fall Time (Typ) 180 ns
Turn-Off Delay Time 310 ns
Continuous Drain Current (ID) 28A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0555Ohm
Drain to Source Breakdown Voltage -60V
Pulsed Drain Current-Max (IDM) 112A
Radiation HardeningNo
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:3994 items

2SJ652 Product Details

2SJ652 Description


2SJ652 is a member of P-channel power MOSFET provided by ON Semiconductor. It is specifically designed for extremely low on-resistance and low input capacitance. Moreover, it is able to provide a 4V drive. Due to its specific characteristics and reliable performance, it is ideally suitable for switching applications.



2SJ652 Features


  • 4V drive

  • Low on-resistance

  • Low input capacitance

  • Supplied in the TO-220F-3SG package



2SJ652 Applications


  • Switching applications


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