2SD1815T-E Overview
DC current gain in this device equals 70 @ 500mA 5V, which is the ratio of the base current to the collector current.As it features a collector emitter saturation voltage of 150mV, it allows for maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 150mA, 1.5A.The base voltage of the emitter can be kept at 6V to achieve high efficiency.A maximum collector current of 3A volts can be achieved.
2SD1815T-E Features
the DC current gain for this device is 70 @ 500mA 5V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 400mV @ 150mA, 1.5A
the emitter base voltage is kept at 6V
2SD1815T-E Applications
There are a lot of ON Semiconductor 2SD1815T-E applications of single BJT transistors.
- Interface
- Inverter
- Driver
- Muting
