2SD1802S-TL-E Overview
DC current gain in this device equals 140 @ 100mA 2V, which is the ratio of the base current to the collector current.With a collector emitter saturation voltage of 190μV, it offers maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 100mA, 2A.The emitter base voltage can be kept at 6V for high efficiency.A breakdown input voltage of 50V volts can be used.Single BJT transistor is possible to have a collector current as low as 3A volts at Single BJT transistors maximum.
2SD1802S-TL-E Features
the DC current gain for this device is 140 @ 100mA 2V
a collector emitter saturation voltage of 190μV
the vce saturation(Max) is 500mV @ 100mA, 2A
the emitter base voltage is kept at 6V
2SD1802S-TL-E Applications
There are a lot of ON Semiconductor 2SD1802S-TL-E applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
