2SC5658RM3T5G Overview
This device has a DC current gain of 215 @ 1mA 6V, which is the ratio between the collector current and the base current.The collector emitter saturation voltage is 400mV, giving you a wide variety of design options.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 5mA, 60mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.The part has a transition frequency of 180MHz.There is a breakdown input voltage of 50V volts that it can take.A maximum collector current of 100mA volts can be achieved.
2SC5658RM3T5G Features
the DC current gain for this device is 215 @ 1mA 6V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 60mA
the emitter base voltage is kept at 5V
a transition frequency of 180MHz
2SC5658RM3T5G Applications
There are a lot of ON Semiconductor 2SC5658RM3T5G applications of single BJT transistors.
- Muting
- Interface
- Driver
- Inverter
