2SC5227A-4-TB-E Description
2SC5227A-4-TB-E is a 10v NPN single CP RF transistor. The RF MOSFETs are metal-oxide-semiconductor field effect transistor that is designed to operate at high frequencies, typically between 100MHz and well into the GHz range. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor 2SC5227A-4-TB-E in the SOT-23-3 package with 200mW power dissipation.
2SC5227A-4-TB-E Features
Low-noise
High gain
High cut-off frequency
Collector-to-Base Voltage: 20v
Collector-to-Emitter Voltage: 10v
Collector Current: 70mA
Collector Dissipation: 200mW
2SC5227A-4-TB-E Applications
Stereo amplifiers
Radio transmitters
Television monitors
