2SC3647S-TD-E Overview
This device has a DC current gain of 100 @ 100mA 5V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 130mV allows maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 100mA, 1A.The emitter base voltage can be kept at 6V for high efficiency.Single BJT transistor can be broken down at a voltage of 100V volts.During maximum operation, collector current can be as low as 2A volts.
2SC3647S-TD-E Features
the DC current gain for this device is 100 @ 100mA 5V
a collector emitter saturation voltage of 130mV
the vce saturation(Max) is 400mV @ 100mA, 1A
the emitter base voltage is kept at 6V
2SC3647S-TD-E Applications
There are a lot of ON Semiconductor 2SC3647S-TD-E applications of single BJT transistors.
- Driver
- Muting
- Inverter
- Interface
