2SB1124S-TD-E Overview
This device has a DC current gain of 140 @ 100mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -700mV.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 700mV @ 100mA, 2A.The base voltage of the emitter can be kept at -6V to achieve high efficiency.In this part, there is a transition frequency of 150MHz.The maximum collector current is 3A volts.
2SB1124S-TD-E Features
the DC current gain for this device is 140 @ 100mA 2V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 100mA, 2A
the emitter base voltage is kept at -6V
a transition frequency of 150MHz
2SB1124S-TD-E Applications
There are a lot of ON Semiconductor 2SB1124S-TD-E applications of single BJT transistors.
- Interface
- Muting
- Inverter
- Driver
