2SA2222SG Overview
DC current gain in this device equals 150 @ 270mA 2V, which is the ratio of the base current to the collector current.A collector emitter saturation voltage of -250mV allows maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Continuous collector voltages of -10A should be maintained to achieve high efficiency.Keeping the emitter base voltage at 6V can result in a high level of efficiency.As you can see, the part has a transition frequency of 230MHz.Single BJT transistor is possible for the collector current to fall as low as 10A volts at Single BJT transistors maximum.
2SA2222SG Features
the DC current gain for this device is 150 @ 270mA 2V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 500mV @ 300mA, 6A
the emitter base voltage is kept at 6V
a transition frequency of 230MHz
2SA2222SG Applications
There are a lot of ON Semiconductor 2SA2222SG applications of single BJT transistors.
- Driver
- Interface
- Muting
- Inverter
