2SA2124-TD-E Overview
This device has a DC current gain of 200 @ 100mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -400mV, which allows maximum flexibilSingle BJT transistory in design.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The emitter base voltage can be kept at -6V for high efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 440MHz.Maximum collector currents can be below 2A volts.
2SA2124-TD-E Features
the DC current gain for this device is 200 @ 100mA 5V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 400mV @ 75mA, 1.5A
the emitter base voltage is kept at -6V
a transition frequency of 440MHz
2SA2124-TD-E Applications
There are a lot of ON Semiconductor 2SA2124-TD-E applications of single BJT transistors.
- Driver
- Inverter
- Muting
- Interface
