2SA2040-TL-E Overview
This device has a DC current gain of 200 @ 500mA 2V, which is the ratio between the collector current and the base current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -230mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 40mA, 2A.Keeping the emitter base voltage at -6V can result in a high level of efficiency.As a result, it can handle voltages as low as 50V volts.A maximum collector current of 8A volts can be achieved.
2SA2040-TL-E Features
the DC current gain for this device is 200 @ 500mA 2V
a collector emitter saturation voltage of -230mV
the vce saturation(Max) is 400mV @ 40mA, 2A
the emitter base voltage is kept at -6V
2SA2040-TL-E Applications
There are a lot of ON Semiconductor 2SA2040-TL-E applications of single BJT transistors.
- Interface
- Driver
- Inverter
- Muting
