2SA2029M3T5G Overview
DC current gain in this device equals 120 @ 1mA 6V, which is the ratio of the base current to the collector current.With a collector emitter saturation voltage of -500mV, it offers maximum design flexibility.A VCE saturation (Max) of 500mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -100mA.In this part, there is a transition frequency of 140MHz.When collector current reaches its maximum, it can reach 100mA volts.
2SA2029M3T5G Features
the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is -100mA
a transition frequency of 140MHz
2SA2029M3T5G Applications
There are a lot of ON Semiconductor 2SA2029M3T5G applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
