2N6520RLRA Overview
In this device, the DC current gain is 20 @ 50mA 10V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The emitter base voltage can be kept at 5V for high efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -500mA.Parts of this part have transition frequencies of 40MHz.There is a breakdown input voltage of 350V volts that it can take.During maximum operation, collector current can be as low as 500mA volts.
2N6520RLRA Features
the DC current gain for this device is 20 @ 50mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is -500mA
a transition frequency of 40MHz
2N6520RLRA Applications
There are a lot of ON Semiconductor 2N6520RLRA applications of single BJT transistors.
- Driver
- Inverter
- Muting
- Interface
