2N6284G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 750 @ 10A 3V.This design offers maximum flexibility with a collector emitter saturation voltage of 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 3V @ 200mA, 20A.Single BJT transistor is recommended to keep the continuous collector voltage at 20A in order to achieve high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 20A current rating.As you can see, the part has a transition frequency of 4MHz.A maximum collector current of 20A volts can be achieved.
2N6284G Features
the DC current gain for this device is 750 @ 10A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 200mA, 20A
the emitter base voltage is kept at 5V
the current rating of this device is 20A
a transition frequency of 4MHz
2N6284G Applications
There are a lot of ON Semiconductor 2N6284G applications of single BJT transistors.
- Driver
- Muting
- Interface
- Inverter
