2N6042G Overview
This device has a DC current gain of 1000 @ 3A 4V, which is the ratio between the collector current and the base current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 2V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Maintaining the continuous collector voltage at 8A is essential for high efficiency.Keeping the emitter base voltage at 5V can result in a high level of efficiency.This device has a current rating of -8A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.Single BJT transistor is possible for the collector current to fall as low as 8A volts at Single BJT transistors maximum.
2N6042G Features
the DC current gain for this device is 1000 @ 3A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 12mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is -8A
2N6042G Applications
There are a lot of ON Semiconductor 2N6042G applications of single BJT transistors.
- Interface
- Inverter
- Driver
- Muting