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2N6027G

2N6027G

2N6027G

ON Semiconductor

2N6027G datasheet pdf and Transistors - Programmable Unijunction product details from ON Semiconductor stock available on our website

SOT-23

2N6027G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 days ago)
Contact PlatingCopper, Silver, Tin
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Surface MountNO
Number of Pins 3
PackagingBulk
Published 2006
JESD-609 Code e1
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Max Operating Temperature100°C
Min Operating Temperature -50°C
Subcategory Programmable Unijunction Transistors
Voltage - Rated DC 40V
Terminal Position BOTTOM
Terminal FormTHROUGH-HOLE
Peak Reflow Temperature (Cel) 260
Current Rating150mA
[email protected] Reflow Temperature-Max (s) 40
Pin Count3
Number of Elements 1
Configuration SINGLE
Power Dissipation300mW
Voltage - Output 11V
Max Repetitive Reverse Voltage (Vrrm) 40V
Trigger Device Type PROGRAMMABLE UJT
On-State Current-Max 150A
Current - Peak 2μA
Current - Valley (Iv) 50μA
Current - Gate to Anode Leakage (Igao) 10nA
Voltage - Offset (Vt) 1.6V
Height 5.33mm
Length 5.2mm
Width 4.19mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:1555 items

2N6027G Product Details

2N6027G Description

2N6027G NPN transistor is one of two types of bipolar transistors. 2N6027G transistor is in a forward amplifying condition when the base voltage is greater than the emitter voltage and the collector voltage is higher than the base voltage. ON Semiconductor 2N6027G is designed for use in general?purpose amplifier and switching applications.

2N6027G Features

Valley Current : 50μA

Offset Voltage: 1.6V

Max On-State Current: 150A

Min Operating Temperature: -50°C

Max Operating Temperature:100°C

2N6027G Applications

Switching applications

General-purpose amplifier


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