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2N5770

2N5770

2N5770

ON Semiconductor

2N5770 datasheet pdf and Transistors - Bipolar (BJT) - RF product details from ON Semiconductor stock available on our website

SOT-23

2N5770 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Supplier Device Package TO-92-3
Operating Temperature-55°C~150°C TJ
PackagingBulk
Published 1997
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC 15V
Current Rating50mA
Base Part Number 2N5770
Polarity NPN
Power Dissipation350mW
Power - Max 350mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 8mA 10V
Collector Emitter Breakdown Voltage15V
Gain 15dB
Voltage - Collector Emitter Breakdown (Max) 15V
Current - Collector (Ic) (Max) 50mA
Noise Figure (dB Typ @ f) 6dB @ 60MHz
Lead Free Lead Free
In-Stock:3557 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.53000$0.53
10$0.41200$4.12
25$0.34760$8.69
100$0.28300$28.3
250$0.23448$58.62
500$0.19404$97.02

2N5770 Product Details

2N5770 Description

This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range.



2N5770 Benefits

0 mA to 30 mA range.

Sourced from Proc ess 43.

See PN918 for characteristics.

Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ,

Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter -Base Voltage

Collector Current - Conti nuous TA = 25°C unless otherwise note d Parameter Value 15 30 4.

5 50 -55 to +150 Units V V V mA °C Operating an d Storage Junction Temperature Range *

These ratings ar .


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