2N5682 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2N5682 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-205AD, TO-39-3 Metal Can
Supplier Device Package
TO-39
Packaging
Bulk
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
2N5682
Power - Max
1W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 250mA 2V
Current - Collector Cutoff (Max)
10μA
Vce Saturation (Max) @ Ib, Ic
1V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
120V
Current - Collector (Ic) (Max)
1A
RoHS Status
Non-RoHS Compliant
In-Stock:10866 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.75000
$0.75
500
$0.7425
$371.25
1000
$0.735
$735
1500
$0.7275
$1091.25
2000
$0.72
$1440
2500
$0.7125
$1781.25
2N5682 Product Details
2N5682 Description
The 2N5682 from ON Semiconductor is an NPN silicon planer epitaxial Metal Transistor intended for use as a driver for high-power transistors in general-purpose amplifiers and switching circuits.
2N5682 Features
NPN silicon planer epitaxial Metal Transistor
12-month limited warranty *view Terms & Conditions for details
96% of customers would recommend to a friend
2N5682 Applications
Industrial, Power Management
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