2N5551TAR Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 80 @ 10mA 5V.A collector emitter saturation voltage of 200mV ensures maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 200mV @ 5mA, 50mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.In extreme cases, the collector current can be as low as 600mA volts.
2N5551TAR Features
the DC current gain for this device is 80 @ 10mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
2N5551TAR Applications
There are a lot of ON Semiconductor 2N5551TAR applications of single BJT transistors.
- Interface
- Muting
- Inverter
- Driver
