2N5551RLRP Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 80 @ 10mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 250mV.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 200mV @ 5mA, 50mA.Keeping the emitter base voltage at 6V can result in a high level of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 600mA.There is a transition frequency of 100MHz in the part.During maximum operation, collector current can be as low as 600mA volts.
2N5551RLRP Features
the DC current gain for this device is 80 @ 10mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 200mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 100MHz
2N5551RLRP Applications
There are a lot of ON Semiconductor 2N5551RLRP applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
