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2N5457G

2N5457G

2N5457G

ON Semiconductor

2N5457G datasheet pdf and Transistors - JFETs product details from ON Semiconductor stock available on our website

SOT-23

2N5457G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status OBSOLETE (Last Updated: 11 hours ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature135°C TJ
PackagingBulk
Published 2006
JESD-609 Code e1
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional FeatureLOW NOISE
HTS Code8541.21.00.95
Voltage - Rated DC 25V
Max Power Dissipation310mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Current Rating10mA
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number 2N5457
Pin Count3
Qualification StatusNot Qualified
Number of Elements 1
Element ConfigurationSingle
Operating ModeDEPLETION MODE
Power Dissipation200mW
FET Type N-Channel
Transistor Application SWITCHING
Input Capacitance (Ciss) (Max) @ Vds 7pF @ 15V
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage 25V
FET Technology JUNCTION
Drain to Source Resistance 2mOhm
Current - Drain (Idss) @ Vds (Vgs=0) 1mA @ 15V
Voltage - Cutoff (VGS off) @ Id 500mV @ 10nA
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:1206 items

2N5457G Product Details

2N5457G Description


N?Channel Junction Field Effect Transistors, depletion mode(Type A) designed for audio and switching applications.


2N5457G Features


? N?Channel for Higher Gain

? Drain and Source Interchangeable

? High AC Input Impedance

? High DC Input Resistance

? Low Transfer and Input Capacitance

? Low Cross?Modulation and Intermodulation Distortion

? Plastic Encapsulated Package

? Pb?Free Packages are Available*


2N5457G Applications


·AM tuner RF amplifier

·Low-noise amplifier


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