2N5401TF Overview
In this device, the DC current gain is 60 @ 10mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 5mA, 50mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of -600mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.This product comes in a TO-92-3 device package from the supplier.This device displays a 150V maximum voltage - Collector Emitter Breakdown.The maximum collector current is 600mA volts.
2N5401TF Features
the DC current gain for this device is 60 @ 10mA 5V
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is -600mA
the supplier device package of TO-92-3
2N5401TF Applications
There are a lot of ON Semiconductor 2N5401TF applications of single BJT transistors.
- Muting
- Inverter
- Interface
- Driver
