2N5306 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2N5306 Datasheet PDF
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Technical Specifications
Parameter Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Number of Pins
3
Supplier Device Package
TO-92-3
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Published
2002
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Voltage - Rated DC
25V
Max Power Dissipation
625mW
Current Rating
1.2A
Base Part Number
2N5306
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power - Max
625mW
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
25V
Max Collector Current
1.2A
DC Current Gain (hFE) (Min) @ Ic, Vce
7000 @ 2mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
1.4V @ 200μA, 200mA
Collector Emitter Breakdown Voltage
25V
Voltage - Collector Emitter Breakdown (Max)
25V
Current - Collector (Ic) (Max)
1.2A
Collector Emitter Saturation Voltage
1.4V
Collector Base Voltage (VCBO)
25V
Emitter Base Voltage (VEBO)
12V
hFE Min
20000
Height
5.33mm
Length
5.2mm
Width
4.19mm
RoHS Status
RoHS Compliant
Lead Free
Lead Free
In-Stock:1890 items
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Unit Price
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2N5306 Product Details
2N5306 Description
2N5306 belongs to the family of silicon NPN epitaxial planar Darlington transistors provided by ON Semiconductor for applications where extremely high current gain at currents to 1.0A is required. Due to its high quality and reliable performance, it is well suited for high gain amplifier applications.
2N5306 Features
Available in the TO-92 package
Collector-emitter voltage of 25 V
Collector-base voltage of 25 V
Operating temperatures ranging from -55 °C to 150 °C
2N5306 Applications
High gain amplifier applications
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