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2N5194G

2N5194G

2N5194G

ON Semiconductor

2N5194G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

2N5194G Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 2 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 4 days ago)
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Surface MountNO
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature-65°C~150°C TJ
PackagingBulk
Published 2000
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -60V
Max Power Dissipation40W
Peak Reflow Temperature (Cel) 260
Current Rating-4A
Frequency 2MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number 2N5194
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation40W
Transistor Application SWITCHING
Halogen Free Halogen Free
Gain Bandwidth Product2MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 1.5A 2V
Current - Collector Cutoff (Max) 1mA
Vce Saturation (Max) @ Ib, Ic 1.4V @ 1A, 4A
Collector Emitter Breakdown Voltage60V
Transition Frequency 2MHz
Collector Emitter Saturation Voltage1.4V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V
hFE Min 25
Height 11.0998mm
Length 7.7978mm
Width 2.9972mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:3093 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.081040$0.08104
500$0.059588$29.794
1000$0.049657$49.657
2000$0.045557$91.114
5000$0.042576$212.88
10000$0.039606$396.06
15000$0.038304$574.56
50000$0.037663$1883.15

2N5194G Product Details

2N5194G Overview


DC current gain in this device equals 25 @ 1.5A 2V, which is the ratio of the base current to the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.4V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.4V @ 1A, 4A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -4A.2MHz is present in the transition frequency.The maximum collector current is 4A volts.

2N5194G Features


the DC current gain for this device is 25 @ 1.5A 2V
a collector emitter saturation voltage of 1.4V
the vce saturation(Max) is 1.4V @ 1A, 4A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
a transition frequency of 2MHz

2N5194G Applications


There are a lot of ON Semiconductor 2N5194G applications of single BJT transistors.

  • Interface
  • Muting
  • Inverter
  • Driver

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