2N3904RLRA Overview
In this device, the DC current gain is 40 @ 100μA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 300mV, which allows maximum flexibilSingle BJT transistory in design.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 200mV @ 1mA, 10mA.Emitter base voltages of 6V can achieve high levels of efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 200mA for this device.The part has a transition frequency of 300MHz.Collector current can be as low as 200mA volts at its maximum.
2N3904RLRA Features
the DC current gain for this device is 40 @ 100μA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 200mV @ 1mA, 10mA
the emitter base voltage is kept at 6V
the current rating of this device is 200mA
a transition frequency of 300MHz
2N3904RLRA Applications
There are a lot of ON Semiconductor 2N3904RLRA applications of single BJT transistors.
- Inverter
- Interface
- Muting
- Driver
