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1N6001B_T50R

1N6001B_T50R

1N6001B_T50R

ON Semiconductor

18Ohms ±5% 100nA @ 8.4V -65°C~200°C DO-204AH, DO-35, Axial

SOT-23

1N6001B_T50R Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case DO-204AH, DO-35, Axial
Supplier Device Package DO-35
Operating Temperature-65°C~200°C
PackagingTape & Reel (TR)
Published 2010
Tolerance ±5%
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number 1N6001
Current - Reverse Leakage @ Vr 100nA @ 8.4V
Voltage - Forward (Vf) (Max) @ If 1.2V @ 200mA
Power - Max 500mW
Impedance-Max 18Ohms
Voltage - Zener (Nom) (Vz) 11V
In-Stock:3094 items

1N6001B_T50R Product Details

1N6001B_T50R Overview


In order to supply this electrical device, a reverse leakage current of 100nA @ 8.4V is required.Zener (Nom) voltage is reduced to 11V during operation.1.2V @ 200mA is achieved when the maximum voltage - Forward (Vf) is applied for its operation.

1N6001B_T50R Features


reverse leakage current of 100nA @ 8.4V
100nA @ 8.4V is the maximum voltage (Tol)


1N6001B_T50R Applications


There are a lot of ON Semiconductor
1N6001B_T50R applications of zener single diodes.


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