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1N4150

1N4150

1N4150

ON Semiconductor

DIODE GEN PURP 50V 200MA DO35

SOT-23

1N4150 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case DO-204AH, DO-35, Axial
Supplier Device Package DO-35
PackagingBulk
Published 1998
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number 1N4150
Speed Small Signal =< 200mA (Io), Any Speed
Diode Type Standard
Current - Reverse Leakage @ Vr 100nA @ 50V
Voltage - Forward (Vf) (Max) @ If 1V @ 200mA
Operating Temperature - Junction 175°C Max
Voltage - DC Reverse (Vr) (Max) 50V
Current - Average Rectified (Io) 200mA
Reverse Recovery Time 6ns
Capacitance @ Vr, F 2.5pF @ 0V 1MHz
In-Stock:36319 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.17000$0.17
500$0.1683$84.15
1000$0.1666$166.6
1500$0.1649$247.35
2000$0.1632$326.4
2500$0.1615$403.75

About 1N4150

The 1N4150 from ON Semiconductor is a high-performance microcontroller designed for a wide range of embedded applications. This component features DIODE GEN PURP 50V 200MA DO35.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the 1N4150, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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