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1N4007GP

1N4007GP

1N4007GP

ON Semiconductor

DIODE GEN PURP 1KV 1A DO41

SOT-23

1N4007GP Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41)
PackagingTape & Reel (TR)
Published 2007
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number 1N4007
Speed Standard Recovery >500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 5μA @ 1000V
Voltage - Forward (Vf) (Max) @ If 1.1V @ 1A
Operating Temperature - Junction -55°C~175°C
Voltage - DC Reverse (Vr) (Max) 1000V
Current - Average Rectified (Io) 1A
Capacitance @ Vr, F 15pF @ 4V 1MHz
In-Stock:52068 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.358000$0.358
10$0.337736$3.37736
100$0.318619$31.8619
500$0.300584$150.292
1000$0.283570$283.57

About 1N4007GP

The 1N4007GP from ON Semiconductor is a high-performance microcontroller designed for a wide range of embedded applications. This component features DIODE GEN PURP 1KV 1A DO41.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the 1N4007GP, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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