Name: PMN45EN,165
Brand: NXP USA Inc.
SKU: PMN45EN,165
Availability: InStock

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PMN45EN,165

Manufacturer part number:PMN45EN,165

Manufacturer:NXP USA Inc.

Description:MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 40m Ω @ 3A, 10V 20V 495pF @ 25V 6.1nC @ 4.5V 30V SC-74, SOT-457

Case Package:SOT-23

Datasheet:PMN45EN,165 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	SC-74, SOT-457
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	TrenchMOS™
Published	1997
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
HTS Code	8541.29.00.75
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	6
JESD-30 Code	R-PDSO-G6
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	1.75W Tc
Operating Mode	ENHANCEMENT MODE
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	40m Ω @ 3A, 10V
Vgs(th) (Max) @ Id	2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	495pF @ 25V
Current - Continuous Drain (Id) @ 25°C	5.2A Tc
Gate Charge (Qg) (Max) @ Vgs	6.1nC @ 4.5V
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	20V
Drain Current-Max (Abs) (ID)	5.2A
Drain-source On Resistance-Max	0.04Ohm
DS Breakdown Voltage-Min	30V
RoHS Status	ROHS3 Compliant

PMN45EN,165 Product Details

PMN45EN,165 Overview

Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 495pF @ 25V.A device's drain current is its maximum continuous current, and this device's drain current is 5.2A.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 30V.In order to operate this transistor, a voltage of 30V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).