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PHK12NQ10T,518

PHK12NQ10T,518

PHK12NQ10T,518

NXP USA Inc.

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 28m Ω @ 6A, 10V ±20V 1965pF @ 25V 35nC @ 10V 100V 8-SOIC (0.154, 3.90mm Width)

SOT-23

PHK12NQ10T,518 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Surface MountYES
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Series TrenchMOS™
Published 2009
JESD-609 Code e4
Part StatusObsolete
Moisture Sensitivity Level (MSL) 2 (1 Year)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish NICKEL PALLADIUM GOLD
HTS Code8541.29.00.75
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count8
JESD-30 Code R-PDSO-G8
Qualification StatusNot Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 8.9W Tc
Operating ModeENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 28m Ω @ 6A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1965pF @ 25V
Current - Continuous Drain (Id) @ 25°C 11.6A Tc
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
JEDEC-95 Code MS-012AA
Drain Current-Max (Abs) (ID) 11.6A
Drain-source On Resistance-Max 0.028Ohm
Pulsed Drain Current-Max (IDM) 48A
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 65 mJ
RoHS StatusROHS3 Compliant
In-Stock:3712 items

PHK12NQ10T,518 Product Details

PHK12NQ10T,518 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 65 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1965pF @ 25V.There is no drain current on this device since the maximum continuous current it can conduct is 11.6A.There is a peak drain current of 48A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 100V, it should remain above the 100V level.The transistor must receive a 100V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

PHK12NQ10T,518 Features


the avalanche energy rating (Eas) is 65 mJ
based on its rated peak drain current 48A.
a 100V drain to source voltage (Vdss)


PHK12NQ10T,518 Applications


There are a lot of NXP USA Inc.
PHK12NQ10T,518 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.

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