PHB143NQ04T,118 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 475 mJ.The maximum input capacitance of this device is 2840pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 75A.There is no pulsed drain current maximum for this device based on its rated peak drain current 240A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 40V.The drain-to-source voltage (Vdss) of this transistor needs to be at 40V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
PHB143NQ04T,118 Features
the avalanche energy rating (Eas) is 475 mJ
based on its rated peak drain current 240A.
a 40V drain to source voltage (Vdss)
PHB143NQ04T,118 Applications
There are a lot of NXP USA Inc.
PHB143NQ04T,118 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
