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PDTB123ES,126

PDTB123ES,126

PDTB123ES,126

NXP USA Inc.

PDTB123ES,126 datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from NXP USA Inc. stock available on our website

SOT-23

PDTB123ES,126 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
PackagingTape & Box (TB)
Published 2009
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Reach Compliance Code unknown
Base Part Number PDTB123
Power - Max 500mW
Transistor Type PNP - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 50mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 500mA
Resistor - Base (R1) 2.2 k Ω
Resistor - Emitter Base (R2) 2.2 k Ω
RoHS StatusROHS3 Compliant
In-Stock:4872 items

About PDTB123ES,126

The PDTB123ES,126 from NXP USA Inc. is a high-performance microcontroller designed for a wide range of embedded applications. This component features PDTB123ES,126 datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from NXP USA Inc. stock available on our website.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the PDTB123ES,126, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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