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MC9S08GT60ACFDE

MC9S08GT60ACFDE

MC9S08GT60ACFDE

NXP USA Inc.

60KB 60K x 8 FLASH 8-Bit Microcontroller S08 Series MC9S08GT60 3V 48-VFQFN Exposed Pad

SOT-23

MC9S08GT60ACFDE Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case 48-VFQFN Exposed Pad
Surface MountYES
Operating Temperature-40°C~85°C TA
PackagingTray
Series S08
Published 2005
Part StatusNot For New Designs
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 48
ECCN Code EAR99
HTS Code8542.31.00.01
Terminal Position QUAD
Terminal FormNO LEAD
Peak Reflow Temperature (Cel) 260
Supply Voltage 3V
Terminal Pitch0.5mm
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MC9S08GT60
Supply Voltage-Max (Vsup) 3.6V
Supply Voltage-Min (Vsup) 2.08V
Oscillator TypeInternal
Number of I/O 39
Speed 40MHz
RAM Size 4K x 8
Voltage - Supply (Vcc/Vdd) 1.8V~3.6V
uPs/uCs/Peripheral ICs Type MICROCONTROLLER
Peripherals LVD, POR, PWM, WDT
Clock Frequency 16MHz
Program Memory TypeFLASH
Core Size 8-Bit
Program Memory Size 60KB 60K x 8
Connectivity I2C, SCI, SPI
Bit Size 8
Data Converter A/D 8x10b
Has ADC YES
DMA Channels NO
PWM Channels YES
Length 7mm
Width 7mm
RoHS StatusROHS3 Compliant
In-Stock:762 items

Pricing & Ordering

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MC9S08GT60ACFDE Product Details

MC9S08GT60ACFDE Description


A high-performing, low-cost S08 general-purpose 8-bit microcontroller is the MC9S08GT60ACFDE. The upgraded S08 core is used by MC9S08GT60ACFDE MCUs, which come in a range of modules, memory sizes, memory types, and packaging types. The MC9S08GT60ACFDE microcontrollers further expand the capabilities of the GT family to smaller memory capacities while keeping higher-end features often seen in more expensive components. The RAM of MC9S08GT16A is quadruple that of its forerunner. Customers that require an 8 KB flash portion have an additional choice.



MC9S08GT60ACFDE Features


  • 8-bit HCS08 CPU Core

Low-power technology

High performance when needed

  • On-Chip Debug Interface

Nonintrusive emulation

Single-wire background debug mode

On-chip trace buffer with nine flexible trigger modes and multiple hardware breakpoints

  • Integrated Third-Generation Flash Memory

In-application reprogrammable

Self-timed, fast programming

Internal program/erase voltage generation

10K write/erase cycles minimum, 100K typical

Flexible block protection and enhanced security

15-year minimum data retention, 100 years typical

Fine Flash granularity—512B Flash erase/1B Flash program

  • Internal Clock Generator

High gain oscillator option

Post-FLL divider gives one of eight bus rate dividers

Trimmable with temperature and voltage compensation (<2 percent drift)

Provides multiple options for clock sources and in-application clock switching

Programmable frequency-locked loop (FLL) generates 8 MHz to 40 MHz (for bus rates up to 20 MHz)

  • 10-bit Analog-to-Digital Converter (ADC)

Eight-channel ADC

14 μs, 10-bit single conversion time



MC9S08GT60ACFDE Applications


  • Industrial

  • Automotive

  • Communications equipment


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