BSR56,215 datasheet pdf and Transistors - JFETs product details from NXP USA Inc. stock available on our website
SOT-23
BSR56,215 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
1997
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
HTS Code
8541.21.00.95
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
BSR56
Pin Count
3
JESD-30 Code
R-PDSO-G3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE
Operating Mode
DEPLETION MODE
Power - Max
250mW
FET Type
N-Channel
Transistor Application
SWITCHING
Drain-source On Resistance-Max
25Ohm
DS Breakdown Voltage-Min
40V
FET Technology
JUNCTION
Power Dissipation-Max (Abs)
0.3W
Feedback Cap-Max (Crss)
5 pF
Current - Drain (Idss) @ Vds (Vgs=0)
50mA @ 15V
Voltage - Cutoff (VGS off) @ Id
4V @ 0.5nA
Voltage - Breakdown (V(BR)GSS)
40V
Resistance - RDS(On)
25Ohm
Current Drain (Id) - Max
20mA
RoHS Status
ROHS3 Compliant
In-Stock:2839 items
BSR56,215 Product Details
BSR56,215 Description
For use in thick and thin-film circuits, symmetrical silicon N-channel depletion type junction field-effect transistors (FETs) are packaged in a plastic microminiature envelope. The transistors are designed for low-power, switching or chopping industrial applications.
BSR56,215 Features
Interchangeable drain and source connections
Small package
BSR56,215 Applications
Low-power, chopper or switching applications
Thick and thin-film circuits
Related Products
Similar Transistors - JFETs from NXP USA Inc. and other manufacturers
