Name: BSP254A,126
Brand: NXP USA Inc.
SKU: BSP254A,126
Availability: InStock

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BSP254A,126

Manufacturer part number:BSP254A,126

Manufacturer:NXP USA Inc.

Description:MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 15 Ω @ 200mA, 10V 20V 90pF @ 25V 250V TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Case Package:SOT-23

Datasheet:BSP254A,126 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Surface Mount	NO
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Published	1998
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	TIN
Additional Feature	LOGIC LEVEL COMPATIBLE
HTS Code	8541.29.00.95
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	O-PBCY-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	1W Ta
Operating Mode	ENHANCEMENT MODE
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	15 Ω @ 200mA, 10V
Vgs(th) (Max) @ Id	2.8V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	90pF @ 25V
Current - Continuous Drain (Id) @ 25°C	200mA Ta
Drain to Source Voltage (Vdss)	250V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	20V
Drain Current-Max (Abs) (ID)	0.2A
DS Breakdown Voltage-Min	250V
Feedback Cap-Max (Crss)	15 pF
RoHS Status	ROHS3 Compliant

BSP254A,126 Product Details

BSP254A,126 Overview

A device's maximal input capacitance is 90pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 0.2A, which is the maximum continuous current the device can conduct.To maintain normal operation, it is recommended that the DS breakdown voltage be above 250V.This transistor requires a 250V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).