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BFR30,235

BFR30,235

BFR30,235

NXP USA Inc.

BFR30,235 datasheet pdf and Transistors - JFETs product details from NXP USA Inc. stock available on our website

SOT-23

BFR30,235 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 1997
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number BFR30
Pin Count3
Power - Max 250mW
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 4pF @ 10V
Drain to Source Voltage (Vdss) 25V
Source Url Status Check Date 2013-06-14 00:00:00
Current - Drain (Idss) @ Vds (Vgs=0) 4mA @ 10V
Voltage - Cutoff (VGS off) @ Id 5V @ 0.5nA
Current Drain (Id) - Max 10mA
RoHS StatusROHS3 Compliant
In-Stock:1614 items

BFR30,235 Product Details

BFR30,235 Description


BFR30,235 is a ±25V Planar epitaxial symmetrical junction N-channel field-effect transistor in a plastic SOT23 package. The NXP BFR30,235 can be applied in Low-level general-purpose amplifiers in thick and thin-film circuits. The Operating and Storage Temperature Range is between -65 and 150℃. And the transistor BFR30,235 is in the SOT23 package with 250mW power dissipation.



BFR30,235 Features


drain-source voltage: ±25V

gate-source voltage: -25V

drain current: 10mA

forward gate current (DC): 5mA

storage temperature: -65~150℃



BFR30,235 Applications


Automotive

Advanced driver assistance systems (ADAS)

Industrial

Building automation

Enterprise systems

Enterprise projectors


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