BAP70-03,115 Overview
The maximum current of this device is 100mA.This device operates at a maximum reverse voltage of 50V in accordance with its applicable specifications.The device may occasionally run at its lowest breakdown voltage.
BAP70-03,115 Features
from a maximum current of 100mA volts
at its lowest breakdown voltage of 50V
BAP70-03,115 Applications
There are a lot of NXP USA Inc. BAP70-03,115 applications of RF diodes.
- Radar systems and modules
- Surface-mount band-switching circuits
- Bandswitch for TV tuners
- RF attenuators
- Laptop and desktop PCs
- Telematic systems
- Low diode forward resistance
- Clamping circuits
- RF attenuators and switches
- Two elements in series configuration in a small-sized plastic SMD package
