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BAP64-05W,115

BAP64-05W,115

BAP64-05W,115

NXP USA Inc.

PIN - 1 Pair Common Cathode 0.35pF @ 20V 1MHz -65°C~150°C TJ 3 Terminations SILICON 260 DUAL Tape & Reel (TR) SC-70, SOT-323

SOT-23

BAP64-05W,115 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 13 Weeks
Package / Case SC-70, SOT-323
Surface MountYES
Diode Element Material SILICON
Operating Temperature-65°C~150°C TJ
PackagingTape & Reel (TR)
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Additional FeatureHIGH VOLTAGE
HTS Code8541.10.00.70
Subcategory PIN Diodes
Technology POSITIVE-INTRINSIC-NEGATIVE
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BAP64-05
Pin Count3
JESD-30 Code R-PDSO-G3
Qualification StatusNot Qualified
Number of Elements 2
Configuration COMMON CATHODE, 2 ELEMENTS
Power Dissipation-Max 240mW
Diode Type PIN - 1 Pair Common Cathode
Application ATTENUATOR; SWITCHING
Current - Max 100mA
Capacitance @ Vr, F 0.35pF @ 20V 1MHz
Voltage - Peak Reverse (Max) 100V
Breakdown Voltage-Min 100V
Reverse Test Voltage 1V
Frequency Band S B
Diode Capacitance-Nom 0.37pF
Resistance @ If, F 1.35Ohm @ 100mA 100MHz
Diode Capacitance-Max 0.35pF
Minority Carrier Lifetime-Nom 1.55 μs
Diode Res Test Current 0.5mA
Diode Res Test Frequency 100MHz
Diode Forward Resistance-Max 40Ohm
RoHS StatusROHS3 Compliant
In-Stock:68673 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.619749$0.619749
10$0.584670$5.8467
100$0.551575$55.1575
500$0.520353$260.1765
1000$0.490899$490.899

BAP64-05W,115 Product Details

BAP64-05W,115 Overview


From 100mA, this device will operate.This device operates at a maximum reverse voltage of 100V based on the applicable device specifications.Sometimes, this device might run at its lowest breakdown voltage.Diode is required that the reverse test voltage be wDiodehin 1V for a valid conversion result.

BAP64-05W,115 Features


from a maximum current of 100mA volts
at its lowest breakdown voltage of 100V


BAP64-05W,115 Applications


There are a lot of NXP USA Inc.
BAP64-05W,115 applications of RF diodes.


  • RF detector
  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes
  • RF attenuators and switches
  • Low-loss, high-power limiters
  • Receiver protectors
  • UHF mixer
  • Sampling circuits

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