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BAP55L,315

BAP55L,315

BAP55L,315

NXP USA Inc.

BAP55L,315 datasheet pdf and Diodes - RF product details from NXP USA Inc. stock available on our website

SOT-23

BAP55L,315 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Package / Case SOD-882
Surface MountYES
Diode Element Material SILICON
Operating Temperature-65°C~150°C TJ
PackagingTape & Reel (TR)
JESD-609 Code e3
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish TIN
HTS Code8541.10.00.80
Technology POSITIVE-INTRINSIC-NEGATIVE
Terminal Position BOTTOM
Terminal FormNO LEAD
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number BAP55
Pin Count2
JESD-30 Code R-PBCC-N2
Qualification StatusNot Qualified
Number of Elements 1
Power Dissipation-Max 500mW
Diode Type PIN - Single
Application ATTENUATOR; SWITCHING
Current - Max 100mA
Capacitance @ Vr, F 0.28pF @ 20V 1MHz
Voltage - Peak Reverse (Max) 50V
Source Url Status Check Date 2013-10-15 00:00:00
Frequency Band S B
Resistance @ If, F 700mOhm @ 100mA 100MHz
Diode Capacitance-Max 0.28pF
Minority Carrier Lifetime-Nom 0.28 µs
Diode Forward Resistance-Max 0.7Ohm
RoHS StatusROHS3 Compliant
In-Stock:4444 items

BAP55L,315 Product Details

BAP55L,315 Overview


RF diode operates at 100mA volts, which is the maximal current RF diode can handle.This device operates at a maximum reverse voltage of 50V based on the applicable device specifications.

BAP55L,315 Features


from a maximum current of 100mA volts

BAP55L,315 Applications


There are a lot of NXP USA Inc. BAP55L,315 applications of RF diodes.

  • Modulators
  • Surface-mount band-switching circuits
  • Series diode for mobile communication transmit/receive switch
  • Ultra high-speed switching
  • Clamping circuits
  • RF attenuators
  • Radar systems for industrial use
  • (SAT) TV
  • General-purpose Voltage Controlled Attenuators for high linearity applications
  • Sampling circuits

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