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BAP51L,315

BAP51L,315

BAP51L,315

NXP USA Inc.

BAP51L,315 datasheet pdf and Diodes - RF product details from NXP USA Inc. stock available on our website

SOT-23

BAP51L,315 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Package / Case SOD-882
Surface MountYES
Diode Element Material SILICON
Operating Temperature-65°C~150°C TJ
PackagingTape & Reel (TR)
JESD-609 Code e3
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish TIN
HTS Code8541.10.00.80
Technology POSITIVE-INTRINSIC-NEGATIVE
Terminal Position BOTTOM
Terminal FormNO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BAP51
Pin Count2
JESD-30 Code R-PBCC-N2
Qualification StatusNot Qualified
Number of Elements 1
Power Dissipation-Max 500mW
Diode Type PIN - Single
Application ATTENUATOR; SWITCHING
Current - Max 100mA
Capacitance @ Vr, F 0.3pF @ 5V 1MHz
Voltage - Peak Reverse (Max) 60V
Breakdown Voltage-Min 60V
Frequency Band S B
Resistance @ If, F 1.5Ohm @ 100mA 100MHz
Diode Capacitance-Max 0.4pF
Minority Carrier Lifetime-Nom 0.55 µs
RoHS StatusROHS3 Compliant
In-Stock:1682 items

BAP51L,315 Product Details

BAP51L,315 Overview


Designed to operate from a maximum of 100mA volts, this device operates from a maximum current of 100mA volts.A maximum reverse voltage of 60V is specified in the applicable device specifications.RF diode is possible that this device may occasionally operate at RF diodes lowest breakdown voltage of 60V.

BAP51L,315 Features


from a maximum current of 100mA volts
at its lowest breakdown voltage of 60V

BAP51L,315 Applications


There are a lot of NXP USA Inc. BAP51L,315 applications of RF diodes.

  • Surface-mount band-switching circuits
  • Sampling circuits
  • Smart metering
  • Phase detection
  • Modulators
  • Radar systems for industrial use
  • UHF mixer
  • Set-top boxes, digital media players
  • Receiver protectors
  • Set top boxes

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