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BAP51-05W,115

BAP51-05W,115

BAP51-05W,115

NXP USA Inc.

BAP51-05W,115 datasheet pdf and Diodes - RF product details from NXP USA Inc. stock available on our website

SOT-23

BAP51-05W,115 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 13 Weeks
Package / Case SC-70, SOT-323
Surface MountYES
Diode Element Material SILICON
Operating Temperature-65°C~150°C TJ
PackagingTape & Reel (TR)
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
HTS Code8541.10.00.70
Subcategory PIN Diodes
Technology POSITIVE-INTRINSIC-NEGATIVE
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BAP51-05
Pin Count3
JESD-30 Code R-PDSO-G3
Qualification StatusNot Qualified
Number of Elements 2
Configuration COMMON CATHODE, 2 ELEMENTS
Power Dissipation-Max 240mW
Diode Type PIN - 1 Pair Series Connection
Current - Max 50mA
Capacitance @ Vr, F 0.35pF @ 5V 1MHz
Voltage - Peak Reverse (Max) 50V
Breakdown Voltage-Min 50V
Diode Capacitance-Nom 0.4pF
Resistance @ If, F 2.5Ohm @ 10mA 100MHz
Diode Capacitance-Max 0.55pF
Minority Carrier Lifetime-Nom 0.55 μs
Diode Res Test Current 0.5mA
Diode Res Test Frequency 100MHz
RoHS StatusROHS3 Compliant
In-Stock:67390 items

Pricing & Ordering

QuantityUnit PriceExt. Price

BAP51-05W,115 Product Details

BAP51-05W,115 Overview


The device is designed to operate from a maximal current of 50mA volts.This device operates at a maximum reverse voltage of 50V in accordance with its applicable specifications.There may be times when this device runs at its lowest possible breakdown voltage, which is 50V.

BAP51-05W,115 Features


from a maximum current of 50mA volts
at its lowest breakdown voltage of 50V

BAP51-05W,115 Applications


There are a lot of NXP USA Inc. BAP51-05W,115 applications of RF diodes.

  • RF attenuators and switches
  • Low diode capacitance
  • Car radio
  • RF detector
  • Diode ring mixer
  • (SAT) TV
  • Low diode forward resistance
  • Surface-mount band-switching circuits
  • Broadband system applications i.e. WCDMA, CATV, etc.
  • RF voltage doubler

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