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BAP50-05,215

BAP50-05,215

BAP50-05,215

NXP USA Inc.

PIN - 1 Pair Common Cathode 0.5pF @ 5V 1MHz -65°C~150°C TJ 3 Terminations SILICON 260 DUAL Tape & Reel (TR) TO-236-3, SC-59, SOT-23-3

SOT-23

BAP50-05,215 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Package / Case TO-236-3, SC-59, SOT-23-3
Surface MountYES
Diode Element Material SILICON
Operating Temperature-65°C~150°C TJ
PackagingTape & Reel (TR)
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
HTS Code8541.10.00.70
Subcategory PIN Diodes
Technology POSITIVE-INTRINSIC-NEGATIVE
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BAP50-05
Pin Count3
JESD-30 Code R-PDSO-G3
Qualification StatusNot Qualified
Number of Elements 2
Configuration COMMON CATHODE, 2 ELEMENTS
Power Dissipation-Max 250mW
Diode Type PIN - 1 Pair Common Cathode
Current - Max 50mA
Capacitance @ Vr, F 0.5pF @ 5V 1MHz
Voltage - Peak Reverse (Max) 50V
Breakdown Voltage-Min 50V
Reverse Test Voltage 1V
Diode Capacitance-Nom 0.6pF
Resistance @ If, F 5Ohm @ 10mA 100MHz
Diode Capacitance-Max 0.6pF
Diode Res Test Current 0.5mA
Diode Res Test Frequency 100MHz
Diode Forward Resistance-Max 40Ohm
RoHS StatusROHS3 Compliant
In-Stock:51959 items

Pricing & Ordering

QuantityUnit PriceExt. Price

BAP50-05,215 Product Details

BAP50-05,215 Overview


Operating from 50mA is the maximum current for this device.The maximum peak reverse voltage for this device is 50V, according to the applicable device specifications.There may be times when this device runs at its lowest possible breakdown voltage, which is 50V.Valid conversion results require a reverse test voltage within 1V.

BAP50-05,215 Features


from a maximum current of 50mA volts
at its lowest breakdown voltage of 50V


BAP50-05,215 Applications


There are a lot of NXP USA Inc.
BAP50-05,215 applications of RF diodes.


  • Radar systems for industrial use
  • Ultra high-speed switching
  • Clamping circuits
  • Diode ring mixer
  • RF detector
  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes
  • RF attenuators and switches

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