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BAP50-03,115

BAP50-03,115

BAP50-03,115

NXP USA Inc.

PIN - Single 0.35pF @ 5V 1MHz -65°C~150°C TJ 2 Terminations SILICON 260 DUAL Tape & Reel (TR) SC-76, SOD-323

SOT-23

BAP50-03,115 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Package / Case SC-76, SOD-323
Surface MountYES
Diode Element Material SILICON
Operating Temperature-65°C~150°C TJ
PackagingTape & Reel (TR)
Published 1999
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin (Sn)
HTS Code8541.10.00.70
Subcategory PIN Diodes
Technology POSITIVE-INTRINSIC-NEGATIVE
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BAP50
Pin Count2
JESD-30 Code R-PDSO-G2
Qualification StatusNot Qualified
Number of Elements 1
Power Dissipation-Max 500mW
Diode Type PIN - Single
Current - Max 50mA
Capacitance @ Vr, F 0.35pF @ 5V 1MHz
Voltage - Peak Reverse (Max) 50V
Breakdown Voltage-Min 50V
Reverse Test Voltage 1V
Diode Capacitance-Nom 0.55pF
Resistance @ If, F 5Ohm @ 10mA 100MHz
Diode Capacitance-Max 0.55pF
Diode Res Test Current 0.5mA
Diode Res Test Frequency 100MHz
Diode Forward Resistance-Max 5Ohm
RoHS StatusROHS3 Compliant
In-Stock:30073 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.359730$0.35973
10$0.339368$3.39368
100$0.320158$32.0158
500$0.302036$151.018
1000$0.284940$284.94

BAP50-03,115 Product Details

BAP50-03,115 Overview


Operating from 50mA is the maximum current for this device.The maximum peak reverse voltage for this device is 50V, according to the applicable device specifications.There may be times when this device runs at its lowest possible breakdown voltage, which is 50V.Valid conversion results require a reverse test voltage within 1V.

BAP50-03,115 Features


from a maximum current of 50mA volts
at its lowest breakdown voltage of 50V


BAP50-03,115 Applications


There are a lot of NXP USA Inc.
BAP50-03,115 applications of RF diodes.


  • Radar systems for industrial use
  • Ultra high-speed switching
  • Clamping circuits
  • Diode ring mixer
  • RF detector
  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes
  • RF attenuators and switches

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