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BAP1321LX,315

BAP1321LX,315

BAP1321LX,315

NXP USA Inc.

PIN - Single 0.28pF @ 20V 1MHz -65°C~150°C TJ 2 Terminations SILICON 260 BOTTOM Tape & Reel (TR) 2-XDFN

SOT-23

BAP1321LX,315 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Package / Case 2-XDFN
Surface MountYES
Diode Element Material SILICON
Operating Temperature-65°C~150°C TJ
PackagingTape & Reel (TR)
Published 2007
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
HTS Code8541.10.00.70
Subcategory PIN Diodes
Technology POSITIVE-INTRINSIC-NEGATIVE
Terminal Position BOTTOM
Terminal FormNO LEAD
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number BAP1321
Pin Count2
JESD-30 Code R-PBCC-N2
Qualification StatusNot Qualified
Number of Elements 1
Power Dissipation-Max 130mW
Diode Type PIN - Single
Application ATTENUATOR; SWITCHING
Current - Max 100mA
Capacitance @ Vr, F 0.28pF @ 20V 1MHz
Voltage - Peak Reverse (Max) 60V
Breakdown Voltage-Min 60V
Frequency Band S B
Diode Capacitance-Nom 0.32pF
Resistance @ If, F 1.3Ohm @ 100mA 100MHz
Diode Capacitance-Max 0.38pF
Minority Carrier Lifetime-Nom 0.48 μs
Diode Res Test Current 0.5mA
Diode Res Test Frequency 100MHz
RoHS StatusROHS3 Compliant
In-Stock:3668 items

BAP1321LX,315 Product Details

BAP1321LX,315 Overview


The maximum current of this device is 100mA.This device operates at a maximum reverse voltage of 60V in accordance with its applicable specifications.This device may operate at its lowest breakdown voltage of 60V on occasion.

BAP1321LX,315 Features


from a maximum current of 100mA volts
at its lowest breakdown voltage of 60V


BAP1321LX,315 Applications


There are a lot of NXP USA Inc.
BAP1321LX,315 applications of RF diodes.


  • Clamping circuits
  • Diode ring mixer
  • RF detector
  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes
  • RF attenuators and switches
  • Low-loss, high-power limiters
  • Receiver protectors

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