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BA278,115

BA278,115

BA278,115

NXP USA Inc.

BA278,115 datasheet pdf and Diodes - RF product details from NXP USA Inc. stock available on our website

SOT-23

BA278,115 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Package / Case SC-79, SOD-523
Surface MountYES
Diode Element Material SILICON
Operating Temperature-65°C~150°C TJ
PackagingTape & Reel (TR)
Published 2001
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Position DUAL
Terminal FormFLAT
Reach Compliance Code unknown
Base Part Number BA278
Pin Count2
JESD-30 Code R-PDSO-F2
Number of Elements 1
Power Dissipation-Max 715mW
Diode Type Standard - Single
Current - Max 100mA
Capacitance @ Vr, F 1.2pF @ 6V 1MHz
Voltage - Peak Reverse (Max) 35V
Source Url Status Check Date 2013-06-14 00:00:00
Frequency Band VERY HIGH FREQUENCY
Resistance @ If, F 700mOhm @ 2mA 100MHz
Diode Capacitance-Max 1.2pF
RoHS StatusROHS3 Compliant
In-Stock:3147 items

BA278,115 Product Details

BA278,115 Overview


In this device, the maximum current is 100mA mA.A maximum reverse voltage of 35V is specified in the applicable device specifications.

BA278,115 Features


from a maximum current of 100mA volts

BA278,115 Applications


There are a lot of NXP USA Inc. BA278,115 applications of RF diodes.

  • Compensators
  • UHF mixer
  • Receiver protectors
  • Smart metering
  • Car radio
  • Ultra high-speed switching
  • Diode ring mixer
  • Wearables
  • RF voltage doubler
  • (SAT) TV

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