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LPC1111FHN33/303,5

LPC1111FHN33/303,5

LPC1111FHN33/303,5

NXP Semiconductors / Freescale

Microprocessor

SOT-23

LPC1111FHN33/303,5 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Pin Count32
Source Url Status Check Date 2013-06-14 00:00:00
RoHS StatusNon-RoHS Compliant
In-Stock:4210 items

LPC1111FHN33/303,5 Product Details

LPC1111FHN33/303,5 Description


LPC1111FHN33/303,5 is a single IGBT with a Voltage - Collector Emitter Breakdown (Max) of 650V from Infineon Technologies. LPC1111FHN33/303,5 operates between -40°C~150°C TJ, and its Max Collector Current is 100A. The LPC1111FHN33/303,5 has 20 pins and it is available in Module packaging way. LPC1111FHN33/303,5 has a 650V Voltage - Collector Emitter Breakdown (Max) value.



LPC1111FHN33/303,5 Features


  • Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 100A

  • Input Capacitance (Cies) @ Vce: 6.2nF @ 25V

  • Collector Emitter Voltage (VCEO): 650V

  • Current - Collector Cutoff (Max): 1mA



LPC1111FHN33/303,5 Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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