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PSMN3R0-30MLC,115

PSMN3R0-30MLC,115

PSMN3R0-30MLC,115

Nexperia USA Inc.

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 3.15m Ω @ 25A, 10V ±20V 2330pF @ 15V 34.8nC @ 10V 30V SOT-1210, 8-LFPAK33

SOT-23

PSMN3R0-30MLC,115 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 26 Weeks
Mounting Type Surface Mount
Package / Case SOT-1210, 8-LFPAK33
Surface MountYES
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Published 2012
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal FormGULL WING
Reach Compliance Code not_compliant
Pin Count8
Reference Standard IEC-60134
JESD-30 Code R-PSSO-G4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 88W Tc
Operating ModeENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.15m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 2.15V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2330pF @ 15V
Current - Continuous Drain (Id) @ 25°C 70A Tc
Gate Charge (Qg) (Max) @ Vgs 34.8nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 70A
Drain-source On Resistance-Max 0.00405Ohm
Pulsed Drain Current-Max (IDM) 498A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 64 mJ
RoHS StatusROHS3 Compliant
In-Stock:5561 items

Pricing & Ordering

QuantityUnit PriceExt. Price

PSMN3R0-30MLC,115 Product Details

PSMN3R0-30MLC,115 Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 64 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2330pF @ 15V.70A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 498A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 30V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 30V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.

PSMN3R0-30MLC,115 Features


the avalanche energy rating (Eas) is 64 mJ
based on its rated peak drain current 498A.
a 30V drain to source voltage (Vdss)


PSMN3R0-30MLC,115 Applications


There are a lot of Nexperia USA Inc.
PSMN3R0-30MLC,115 applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification

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