PSMN1R5-30YL,115 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 5057pF @ 12V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 30V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 30V.As a result of its turn-off delay time, which is 76 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 790A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 46 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The maximum dual supply voltage can be supported by 30V.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
PSMN1R5-30YL,115 Features
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 76 ns
based on its rated peak drain current 790A.
PSMN1R5-30YL,115 Applications
There are a lot of Nexperia USA Inc.
PSMN1R5-30YL,115 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
